Process Technology Overview

Supertex has processes covering a wide range of operating voltages from 1.5 Volts up to 700 Volts. Most processes are available with double poly and double metal layers. The following are some standard processes available for foundry services:


Process Parameters

Technology
4.0
Micron

CMOS
3.0
Micron

CMOS
(*w/LDD)
2.0
Micron

CMOS
(*w/LDD)
1.2
Micron

CMOS
(1 poly)
1.2
Micron

CMOS
(2 poly)
0.8
Micron

CMOS
0.8
Micron

CMOS
Well Type p-Well n-Well or
p-Well
n-Well or
p-Well
Twin-Well Twin-Well Twin-Well Twin-Well
Poly Layers Single/
Double
Single/
Double
Single/
Double
Single Double Single/
Double
Single/
Double
Poly Width/Space (µm) 1st
2nd
4.0/3.0
4.0/4.0
3/0/3.0
3/0/3.0
2.0/2.5
2.0/3.0
1.2/1.4
----
1.2/1.4
1.6/2.2
0.8/1.0
0.8/1.0
0/6/0.7
0.6/0.7
Metal Layers Single/
Double
Single/
Double
Single/
Double
Single/
Double
Single/
Double
Single/
Double/
Triple
Single/
Double
Metal 1 Width/Space (µm) 4.0/4.0 4.0/3.0 2.5/2.5 2.2/1.2 2.2/1.2 1.4/1.0 0.8/0.8
Metal 2 Width/Space (µm) 6.0/4.0 4.0/4.0 3.0/3.0 2.0/1.6 2.0/1.6 1.4/1.0 0.8/0.9
Metal 3 Width/Space (µm) ---- ---- ---- ---- ---- 1.4/1.2 ----
Contact Width/Space (µm) 3.0/3.0 3.0/3.0 2.0/2.0 1.2/1.4 1.2/1.4 0.8/0.8 0.6/0.6
Via 1 Width/Space (µm) 4.0/4.0 3.0/3.0 2.0/2.5 1.2/1.6 1.2/1.6 0.8/1.0 0.6/0.8
Via 2 Width/Space (µm) ---- ---- ---- ---- ---- 0.8/1.0 ----
Max. Operating Voltage (V) 15 *12/5.5 *20,*10,5.5 5.5 5.5 5.5 5.5
Gate Oxide Thickness (Å) 580 500 400 225 225 150/175 130
BVDSSN (Typ.) (V) 21.5 *24/19 15 16 14.5 14 11
BVDSSP (Typ.) (V) -22 *-18/17 -15 -15 -14.5 -11 -8
*Contact factory for LDD option

0.6µm CMOS Process
0.8µm CMOS Process
1.2µm CMOS Process
2.0µm N-Well CMOS Process
2.0µm P-Well CMOS Process
3.0µm N-Well CMOS Process
3.0µm P-Well CMOS Process
4.0µm P-Well CMOS Process
5.0µm P-Well CMOS Process
CCD Processes
CMOS CCD Processes
Rad-Hard Process
Wafer Foundry Services Catalog
 

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